Resistless EUV lithography: Photon-induced oxide patterning on silicon

Author:

Tseng Li-Ting1ORCID,Karadan Prajith1,Kazazis Dimitrios1ORCID,Constantinou Procopios C.1ORCID,Stock Taylor J. Z.23ORCID,Curson Neil J.23,Schofield Steven R.24ORCID,Muntwiler Matthias1ORCID,Aeppli Gabriel156,Ekinci Yasin1

Affiliation:

1. Paul Scherrer Institute, 5232 Villigen PSI, Switzerland.

2. London Centre for Nanotechnology, University College London, London WC1H 0AH, UK.

3. Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.

4. Department of Physics and Astronomy, University College London, London WC1E 6BT, UK.

5. Laboratory for Solid State Physics and Quantum Center, ETH-Zürich, 8093 Zürich, Switzerland.

6. Institut de Physique, EPFL, 1015 Lausanne, Switzerland.

Abstract

In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially hydrogen-terminated silicon surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the hydrogen desorption in scanning tunneling microscopy–based lithography. We achieve silicon dioxide/silicon gratings with 75-nanometer half-pitch and 31-nanometer height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nanometer-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference43 articles.

1. Cramming more components onto integrated circuits;Moore G. E.;Electronics,1965

2. High-NA EUV lithography exposure tool: Program progress;van Schoot J.;Proc. SPIE,2020

3. Photo Material Readiness at the Eve of EUVL HVM

4. Stochastics in extreme ultraviolet lithography: investigating the role of microscopic resist properties for metal-oxide-based resists

5. Radiation Chemistry in Chemically Amplified Resists

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3