Semiconductor substrate cleaning and surface morphology in molecular beam epitaxy-Reference-Cited by-同舟云学术

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Semiconductor substrate cleaning and surface morphology in molecular beam epitaxy

Published:1997-03 Issue:1-3 Volume:374 Page:418-426
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Ritchie S.,Johnson S.R.,Lavoie C.,Mackenzie J.A.,Tiedje T.,Streater R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference24 articles.

1. Damage introduction in InP and InGaAs during Ar and H2plasma exposure

2. Plasma etching of III–V compound semiconductor materials and their oxides

3. Hydrogen plasma etching of GaAs oxide

4. GaAs cleaning with a hydrogen radical beam gun in an ultrahigh-vacuum system

5. Etching of GaAs(100) by Activated Hydrogen

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal Deoxidation of Semiconductor Substrates Assisted by Machine Learning and Real-Time Feedback Control;ACS Applied Materials & Interfaces;2024-03-30

2. Topography of epitaxial GaAs surfaces for growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

3. Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen;Applied Surface Science;2008-10

4. Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy;Thin Solid Films;2008-04

5. Comparative study of the GaAs(100) surface cleaned by atomic hydrogen;Applied Surface Science;2006-08

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