Damage introduction in InP and InGaAs during Ar and H2plasma exposure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107845
Reference19 articles.
1. AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch
2. Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy
3. Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He
4. Damage studies of dry etched GaAs recessed gates for field effect transistors
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