First-principles calculation of valence band offset and the interface states in GaAs/GaN(001) superlattice
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. First-principles calculation of band-gaps reduction in GaAsN alloys and (110) growth axis GaAs/GaN superlattice;Chinese Journal of Physics;2016-02
2. Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface;Physical Chemistry Chemical Physics;2016
3. Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study;Journal of Applied Physics;2015-04-07
4. GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices;ACS Applied Materials & Interfaces;2015-02-25
5. Introduction to Space Charge Effects in Semiconductors;Springer Series in Solid-State Sciences;2010
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