Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface-Reference-Cited by-同舟云学术

Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface

Published:2016 Issue:4 Volume:18 Page:2639-2645
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Xi Shouzhi¹²³⁴⁵,Jie Wanqi¹²³⁴⁵,Zha Gangqiang¹²³⁴⁵,Yuan Yanyan¹²³⁴,Wang Tao¹²³⁴⁵,Zhang Wenhua⁶⁷⁸⁴,Zhu Junfa⁶⁷⁸⁴^ORCID,Xu Lingyan¹²³⁴⁵,Xu Yadong¹²³⁴⁵,Su Jie¹²³⁴,Zhang Hao¹²³⁴⁵,Gu Yaxu¹²³⁴⁵,Li Jiawei¹²³⁴,Ren Jie¹²³⁴⁵,Zhao Qinghua¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Solidification Processing

2. Northwestern Polytechnical University

3. Xi'an 710072

4. P. R. China

5. Key Laboratory of Radiation Detection Materials and Devices

6. National Synchrotron Radiation Laboratory

7. University of Science and Technology of China

8. Hefei 230029

Abstract

The potential barrier height of CdTe/GaAs heterointerface can be tuned by the density of Ga–Te bonds and the thickness of the Ga–Te interface layer.

Publisher