Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study-Reference-Cited by-同舟云学术

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Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

Published:2015-04-07 Issue:13 Volume:117 Page:135302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cao Ruyue¹,Zhang Zhaofu¹,Wang Changhong¹,Li Haobo¹,Xie Xinjian²,Dong Hong¹,Liu Hui¹,Wang Weichao¹

Affiliation:

1. College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, People's Republic of China

2. College of Materials Science, Hebei Technology University, Tianjin 300401, People's Republic of China

Funder

Fundamental Research Funds for the Central Universities

Natural Basic Research Program of China

Natural Science Foundation of Tianjin

Specialized Research Fund for the Doctoral Program of Higher Education

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4916724

Reference42 articles.

1. Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics

2. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

3. Nanometre-scale electronics with III–V compound semiconductors

4. Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

5. Limiting Factors of Channel Mobility in III-V/Ge MOSFETs

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1. The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations;Applied Surface Science;2023-03

2. Atomic and electronic properties of different types of SiC/SiO2 interfaces: First-principles calculations;Surfaces and Interfaces;2022-10

3. Mechanical strength and band alignment of BAs/GaN heterojunction polar interfaces: A first-principles calculation study;Physical Review Materials;2022-03-21

4. Impact of the vertical strain on the Schottky barrier height for graphene/AlN heterojunction: a study by the first-principles method;The European Physical Journal B;2021-01

5. The external electric‐field‐induced Schottky‐to‐ohmic contact transition in graphene/ As 2 S 3 interface: A study by the first principles;International Journal of Energy Research;2020-11-16

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