The external electric‐field‐induced Schottky‐to‐ohmic contact transition in graphene/ As 2 S 3 interface: A study by the first principles-Reference-Cited by-同舟云学术

The external electric‐field‐induced Schottky‐to‐ohmic contact transition in graphene/ As 2 S 3 interface: A study by the first principles

Published:2020-11-16 Issue:3 Volume:45 Page:4727-4734
ISSN:0363-907X
Container-title:International Journal of Energy Research
language:en
Short-container-title:Int J Energy Res

Author:

Liu Xuefei¹^ORCID,Zhang Zhaocai²,Lv Bing¹,Ding Zhao³,Luo Zijiang⁴

Affiliation:

1. Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province Guizhou Normal University Guiyang China

2. Beijing Institute of Space Science and Technology Information Beijing China

3. College of Big data and Information Engineering Guizhou University Guiyang China

4. College of Information Guizhou University of Finance and Economics Guiyang China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Energy Engineering and Power Technology,Fuel Technology,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/er.6070

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3. Phosphorene: from theory to applications

4. Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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