Electroless Cu deposition on atomic layer deposited Ru as novel seed formation process in through-Si vias

Author:

Inoue Fumihiro,Philipsen Harold,Radisic Aleksandar,Armini Silvia,Civale Yann,Leunissen Peter,Kondo Muneharu,Webb Eric,Shingubara Shoso

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference39 articles.

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3. Architectural implications and process development of 3-D VLSI Z-axis interconnects using through silicon vias;Schaper;IEEE Transactions on Advanced Packaging,2005

4. Technologies for very high bandwidth electrical interconnects between next generation VLSI circuits;Beyne;IEEE-IEDM 2001 Technical Digest,2001

5. Void-free filling of HAR TSVs using a wet alkaline Cu seed on CVD Co as a replacement for PVD Cu seed;Armini;Journal of the Electrochemical Society,2011

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