Anomalous surface damage production during high energy implantation analyzed by ellipsometry and RBS
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Elsevier
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1. In situ spectroscopic ellipsometry in vertical furnace: monitoring and control of high-temperature processes;Vacuum;2001-05
2. Fluence dependence of the interband critical points in ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-08
3. He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
4. Damage accumulation in Si during N+ and bombardment along random and channeling directions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
5. Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
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