Nano-cluster formation in halogen etching on Cl/Si(111)-7×7-Reference-Cited by-同舟云学术

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Nano-cluster formation in halogen etching on Cl/Si(111)-7×7

Published:2004-09 Issue: Volume:566-568 Page:425-429
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Shudo K.,Kirimura T.,Kaneko N.,Takahashi M.,Tanaka Y.,Ishikawa T.,Tanaka M.,Nakagawa H.,Asakura S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference10 articles.

1. Thermal Desorption Process of Bromide on Si(111) Studied by Highly Sensitive Mass Spectroscopy

2. Electronic properties and bonding sites for chlorine chemisorption on Si(111)-(7×7)

3. The chemisorption of chlorosilanes and chlorine on Si(111)7 × 7

4. Equivalent Step Structures along Inequivalent Crystallographic Directions on Halogen-Terminated Si(111)-(1×1)Surfaces

5. Origin of homoepitaxial faulted island growth on the Si(111) surface

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanometer-Scale Structure Formation on Solid Surfaces;Nano- and Micromaterials;2008

2. Regular arrangement of nanometre-scale clusters by surface strain on stabilized Cl/Si(111);Journal of Physics: Condensed Matter;2007-02-13

3. Quantitative analysis of thermally induced desorption during halogen-etching of a silicon (111) surface;Surface Science;2006-08

4. Characterization of initial halogen adsorption on Si(111) surface by scanning tunnelling microscopy: correlation with optical measurements;Journal of Physics: Condensed Matter;2006-06-16

5. Desorption Induced by Excited Electrons from Semiconductor Surfaces (I)-Desorption Induced by Electron-/hole-injection into Halogen-adsorbed Silicon Surfaces-;Shinku;2006

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