Origin of homoepitaxial faulted island growth on the Si(111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Epitaxy of Single Crystal Phase Change Materials on Si(111);MRS Proceedings;2011
2. Nanometer-Scale Structure Formation on Solid Surfaces;Nano- and Micromaterials;2008
3. Regular arrangement of nanometre-scale clusters by surface strain on stabilized Cl/Si(111);Journal of Physics: Condensed Matter;2007-02-13
4. Quantitative analysis of thermally induced desorption during halogen-etching of a silicon (111) surface;Surface Science;2006-08
5. Dependence of stacking-fault nucleation on cluster mobility;Physical Review B;2005-03-25
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