Quantitative analysis of thermally induced desorption during halogen-etching of a silicon (111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference30 articles.
1. Formation of thermally stable alkylidene layers on a catalytically active surface
2. Thermal Desorption Process of Bromide on Si(111) Studied by Highly Sensitive Mass Spectroscopy
3. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
4. Role of dimer stacking-fault structures in Si(111) growth and etching
5. Equivalent Step Structures along Inequivalent Crystallographic Directions on Halogen-Terminated Si(111)-(1×1)Surfaces
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