Characterization of initial halogen adsorption on Si(111) surface by scanning tunnelling microscopy: correlation with optical measurements
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/18/i=26/a=009/pdf
Reference25 articles.
1. Nano-cluster formation in halogen etching on Cl/Si(111)-7×7
2. Self-organization of nanostructures on Si wafers using surface structure control
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1. Molecular Nanocorrals on Si(111)-(7×7): Temperature-Dependent Site Selectivity;The Journal of Physical Chemistry C;2016-10-25
2. Etching properties and electrical characterization of surfaces of silicon-on-insulator substrates in presence of halogens;Journal of Applied Physics;2012-03-15
3. Photoemission study of CCl4 adsorption on Si(111)-7×7;Surface Science;2008-07
4. Nanometer-Scale Structure Formation on Solid Surfaces;Nano- and Micromaterials;2008
5. Real-time observation of electron-stimulated effects on Si(001)-(2 × 1) by optical reflectance spectroscopic methods;Journal of Physics: Condensed Matter;2007-09-24
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