Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth-Reference-Cited by-同舟云学术

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Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

Published:2003-12 Issue:3 Volume:547 Page:L865-L870
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kessels W.M.M.,Hoefnagels J.P.M.,van den Oever P.J.,Barrell Y.,van de Sanden M.C.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference23 articles.

1. Radical species in argon‐silane discharges

2. Mass spectrometry detection of radicals in SiH4-CH4-H2glow discharge plasmas

3. Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

4. On the growth mechanism of a-Si:H

5. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon

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1. Monte Carlo Simulation of Chemical Reactions in Plasma Enhanced Chemical Vapor Deposition: from Microscopic View to Macroscopic Results;Silicon;2018-06-22

2. Quantum Confinement in an Intrinsic a-Si:H Thin Film Deposited on Soda Lime Glass Substrate Using PECVD;Transactions on Electrical and Electronic Materials;2018-01-31

3. High deposition rate nanocrystalline and amorphous silicon thin film production via surface wave plasma source;Surface and Coatings Technology;2017-09

4. Lattice kinetic Monte Carlo simulation of epitaxial growth of silicon thin films in H 2 /SiH 4 chemical vapor deposition systems;Thin Solid Films;2017-07

5. Shaping thin film growth and microstructure pathways via plasma and deposition energy: a detailed theoretical, computational and experimental analysis;Physical Chemistry Chemical Physics;2017

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