UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra-Reference-Cited by-同舟云学术

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UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra

Published:2005-04 Issue:1-3 Volume:580 Page:207-217
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Karlsson P.G.,Richter J.H.,Andersson M.P.,Blomquist J.,Siegbahn H.,Uvdal P.,Sandell A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference37 articles.

1. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics

2. Microscopic structure of theSiO2/Si interface

3. Photoemission Extended Fine Structure Study of the SiO2/Si(111) Interface

4. Statistical Cross-Linking at theSi(111)/SiO2Interface

5. Local Atomic Environment of Si Suboxides at theSiO2/Si(111)Interface Determined by Angle-Scanned Photoelectron Diffraction

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1. Low‐Temperature Oxidation‐Processed Titanium Oxides as Dual‐Functional Electron‐Selective Passivation Contacts;Solar RRL;2020-04

2. A 14.7% Organic/Silicon Nanoholes Hybrid Solar Cell via Interfacial Engineering by Solution-Processed Inorganic Conformal Layer;ACS Applied Materials & Interfaces;2016-12-08

3. Low-Temperature Synthesis of a TiO2/Si Heterojunction;Journal of the American Chemical Society;2015-11-20

4. On the chemical grafting of titanium nitride by diazonium chemistry;RSC Advances;2015

5. DFT, CBS-Q, W1BD and G4MP2 calculation of the proton and electron affinities, gas phase basicities and ionization energies of saturated and unsaturated carboxylic acids (C1 -C4 );International Journal of Quantum Chemistry;2013-01-12

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