Ultrathin ZrO2 films on Si-rich SiC(0001)-(3×3): Growth and thermal stability-Reference-Cited by-同舟云学术

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Ultrathin ZrO2 films on Si-rich SiC(0001)-(3×3): Growth and thermal stability

Published:2007-06 Issue:11 Volume:601 Page:2390-2400
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Karlsson P.G.,Johansson L.I.,Richter J.H.,Virojanadara C.,Blomquist J.,Uvdal P.,Sandell A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference45 articles.

1. Improved oxidation procedures for reduced SiO2/SiC defects

2. On the correlation between the carbon content and the electrical quality of thermally grown oxides on p-type 6H–Silicon carbide

3. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning

4. Hole traps in oxide layers thermally grown on SiC

5. SiC/SiO2 interface-state generation by electron injection

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1. Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution;Micro & Nano Letters;2017-06

2. Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC;Journal of Physics D: Applied Physics;2016-05-03

3. An investigation of thin Zr films on 6H-SiC(0001) and GaN(0001) surfaces by XPS, LEED, and STM;Applied Physics A;2016-03-07

4. Band engineering magneto-resistance effect in Co:a-C films;Carbon;2015-01

5. Experimental versusab initiox-ray absorption of iron-doped zirconia: Trends in OK-edge spectra as a function of iron doping;Physical Review B;2014-11-04

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