Band engineering magneto-resistance effect in Co:a-C films-Reference-Cited by-同舟云学术

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Band engineering magneto-resistance effect in Co:a-C films

Published:2015-01 Issue: Volume:81 Page:821-825
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Chuang P.Y.,Huang J.C.A.,Lu P.E.,Hsu H.S.,Sun S.J.,Yang Y.W.,Chen J.M.,Lee C.H.

Funder

National Science Council of Taiwan

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference24 articles.

1. Nonvolatile resistive switching memory based on amorphous carbon;Zhuge;Appl Phys Lett,2010

2. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO2/Si;Ming;Appl Phys Lett,2010

3. Photovoltaic characteristics of postdeposition iodine-doped amorphous carbon films by microwave surface wave plasma chemical vapor deposition;Omer Ashraf;Appl Phys Lett,2005

4. Ammonia sensitivity of amorphous carbon film/silicon heterojunctions;Xili;Appl Phys Lett,2007

5. Anomalous electrical transport properties of amorphous carbon films on Si substrates;Xue;Carbon,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low inner stress nano-diamond and C60 incorporated diamond-like carbon films prepared by magnetron sputtering;Proceedings of the 2019 The 2nd International Conference on Robotics, Control and Automation Engineering;2019-11-16

2. Sign change of magnetoresistance in Gd-doped amorphous carbon granular films;Physical Chemistry Chemical Physics;2015

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