Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution-Reference-Cited by-同舟云学术

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Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution

Published:2017-06 Issue:6 Volume:12 Page:347-351
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Wong Yew Hoong¹,Lee Chit Ying¹,Goh Kian Heng¹

Affiliation:

1. Department of Mechanical EngineeringFaculty of EngineeringUniversity of Malaya50603Kuala LumpurMalaysia

Funder

Universiti Malaya

Ministry of Higher Education, Malaysia

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2016.0624

Reference38 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. A study on interface layer with annealing conditions of ZrO2/ZrSixOy high‐k gate oxide;Kim H.D.;J. Korean Phys. Soc.,2006

3. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

4. Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

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