Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate-Reference-Cited by-同舟云学术

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Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Published:2011-03 Issue:1 Volume:14 Page:13-17
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kurniawan Tedi,Wong Yew Hoong,Yew Cheong Kuan,Moon Jeong Hyun,Bahng Wook,Abdul Razak Khairunisak,Lockman Zainovia,Joon Kim Hyeong,Kim Nam-Kyun

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. SiC technology;Neudeck,2000

2. Characterization of crystalline rare-earth oxide high-k dielectrics grown by molecular beam epitaxy on silicon carbide;Fissel;J Vac Sci Technol B,2006

3. Oxidation, MOS capacitors, and MOSFETs;Dimintrijev,2004

4. Insulator investigation on SiC for improved reliability;Lipkin;IEEE Trans Electron Devices,1999

5. Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide;Cheong;Appl Phys Lett,2007

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates;Materials Research Express;2024-01-01

2. Effects of O2 and N2 Gas Concentration on the Formation of Ho2O3 Gate Oxide on 4H-SiC Substrate;Silicon;2022-08-04

3. Review—Gate Oxide Thin Films Based on Silicon Carbide;ECS Journal of Solid State Science and Technology;2022-08-01

4. Effects of Oxidation Duration on the Structural and Electrical Characteristics of Ho2O3 Gate Oxide on 4H-SiC Substrate;Journal of Electronic Materials;2022-05-22

5. Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient;Surfaces and Interfaces;2021-04

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