Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2730731
Reference16 articles.
1. Insulator investigation on SiC for improved reliability
2. Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O
3. HfO2-based insulating stacks on 4H–SiC(0001)
4. Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)
5. Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)
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