Chemically selective formation of Si–O–Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)-Reference-Cited by-同舟云学术

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Chemically selective formation of Si–O–Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)

Published:2016-10 Issue: Volume:652 Page:322-333
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Park Sang Wook,Kim Hyonwoong,Chagarov Evgueni,Siddiqui Shariq,Sahu Bhagawan,Yoshida Naomi,Kachian Jessica,Feenstra Randall,Kummel Andrew C.

Funder

Center for Low Energy Systems Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference64 articles.

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2. FinFET—a self-aligned double-gate MOSFET scalable to 20nm;Hisamoto;IEEE T. Electron Dev.,2000

3. Sub 50-nm P-channel FinFET;Xuejue;IEEE T. Electron Dev.,2001

4. FinFET scaling to 10nm gate length, IEDM '02;Bin;Tech. Dig. Int.,2002

5. High mobility Si/SiGe strained channel MOS transistors with HfO2/TiN gate stack, 2003 IEDM'03;Datta;Tech. Dig. Int.,2003

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2. Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant;Applied Physics Letters;2022-11-28

3. Electrical Characteristics of Si_0.8Ge_0.2 p-MOSFET With TMA Pre-Doping and NH₃ Plasma IL Treatment;IEEE Transactions on Electron Devices;2022-04

4. Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization;The Journal of Chemical Physics;2017-02-07

5. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110);The Journal of Chemical Physics;2017-02-07

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