Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization-Reference-Cited by-同舟云学术

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Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization

Published:2017-02-07 Issue:5 Volume:146 Page:052808
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Park Sang Wook¹,Choi Jong Youn¹,Siddiqui Shariq²,Sahu Bhagawan²,Galatage Rohit²^ORCID,Yoshida Naomi³,Kachian Jessica³,Kummel Andrew C.¹⁴

Affiliation:

1. Materials Science and Engineering Program, University of California, La Jolla, San Diego, California 92093, USA

2. TD Research, GlobalFoundries USA Inc., 257 Fuller Road, Albany, New York 12203, USA

3. Applied Materials, Inc., Santa Clara, California 95054, USA

4. Department of Chemistry and Biochemistry, University of California, La Jolla, San Diego, California 92093, USA

Funder

National Science Foundation (NSF)

Semiconductor Research Corporation (SRC)

Applied Materials

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jcp/146/5/1.4966690.pdf?itemId=/content/aip/journal/jcp/146/5/10.1063/1.4966690&mimeType=pdf&containerItemId=content/aip/journal/jcp

Reference30 articles.

1. High-mobility Si and Ge structures

2. Si/SiGe heterostructures: from material and physics to devices and circuits

3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

4. Fundamentals of Carrier Transport

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