Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells-Reference-Cited by-同舟云学术

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Mobility gap profiles in Si:H intrinsic layers prepared by H2-dilution of SiH4: effects on the performance of p–i–n solar cells

Published:2002-04 Issue: Volume:299-302 Page:1136-1141
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Koval R.J.,Ferlauto A.S.,Pearce J.M.,Collins R.W.,Wronski C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Conference Record, 25th IEEE Photovoltaics Specialists Conference;Lee,1996

2. Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometry

3. Performance and stability of Si:H p–i–n solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary

4. Study of the Amorphous-to-Microcrystalline Transition during Silicon Film Growth at Increased Rates: Extensions of the Evolutionary Phase Diagram

5. Advances in multichannel spectroscopic ellipsometry

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1. Reduction of Tail State on Boron Doped Hydrogenated Amorphous Silicon Oxide Films Prepared at High Hydrogen Dilution;Journal of Nanoscience and Nanotechnology;2013-12-01

2. Thermal ideality factor of hydrogenated amorphous siliconp-i-nsolar cells;Journal of Applied Physics;2011-11-15

3. Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase (amorphous+nanocrystalline) p-type contacts of low nanocrystalline content;Journal of Applied Physics;2007-06

4. Kinetics of silicon film growth and the deposition phase diagram;Journal of Non-Crystalline Solids;2004-06

5. Recombination in n-i-p (Substrate) a-Si:H Solar Cells with Silicon Carbide and Protocrystalline p-Layers;MRS Proceedings;2003

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