Properties of SiO2 films deposited on silicon at low temperatures by plasma enhanced decomposition of hexamethyldisilazane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Downstream microwave plasma‐enhanced chemical vapor deposition of oxide using tetraethoxysilane
2. Low Temperature, Atmospheric Pressure CVD Using Hexamethyldisiloxane and Ozone
3. Growth kinetics and step coverage in plasma deposition of silicon dioxide from organosilicon compounds
4. Silicon dioxide chemical vapor deposition using silane and hydrogen peroxide
5. Structural Properties of Low Temperature Silicon Oxide Films Prepared by Remote Plasma‐Enhanced Chemical Vapor Deposition
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1. Replacement of Waveguides by a Resonant Cavity in a Microwave CVD Reactor;IEEE Transactions on Plasma Science;2021-09
2. Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor;Applied Surface Science;2019-08
3. Comparative study on the deposition of silicon oxide permeation barrier coatings for polymers using hexamethyldisilazane (HMDSN) and hexamethyldisiloxane (HMDSO);Journal of Physics D: Applied Physics;2018-05-15
4. Organosilicon Coatings Deposited in Atmospheric Pressure Townsend Discharge for Gas Barrier Purpose: Effect of Substrate Temperature on Structure and Properties;ACS Applied Materials & Interfaces;2012-11-15
5. Silica nanofilms deposited by atmospheric pressure plasma liquid deposition;Thin Solid Films;2012-01
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