Structural Properties of Low Temperature Silicon Oxide Films Prepared by Remote Plasma‐Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Structural Properties of Low Temperature Silicon Oxide Films Prepared by Remote Plasma‐Enhanced Chemical Vapor Deposition

Published:1993-10-01 Issue:10 Volume:140 Page:3014-3018
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Ortiz A.¹²³,Alonso J. C.¹²³,Falcony C.¹²³,Farias M. H.¹²³,Cota‐Araiza L.¹²³,Soto G.¹²³

Affiliation:

1. Instituto de Investigaciones en Materiales, UNAM, Coyoacan 04510, México D.F., México

2. Departamento de Física, CINVESTAV‐IPN, 07000 México D.F., México

3. Instituto de Física, Laboratorio de Ensenada, UNAM, Ensenada 22800, Baja California, México

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2220949/pdf

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