Bond exchange, network restructuring and recrystallization in vacuum-ultraviolet-irradiated a-Si:H films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Microscopic origin of light‐induced changes in hydrogenated amorphous silicon
2. Evidence of light‐induced bond breaking in hydrogenated amorphous silicon
3. Detection of photoinduced structural change in a-Si:H by bending effect
4. Photoinduced structural change and defect creation in hydrogenated amorphous silicon
5. Reversible conductivity changes in discharge‐produced amorphous Si
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-Limiting Formation and Optical Properties of Hemispherical Grains of Microcrystalline Silicon on an Amorphous Silicon Film Surface;Solid State Phenomena;2003-06
2. Mechanisms of network rearrangement and compaction in a-SiNx:H films exposed to synchrotron radiation;Journal of Non-Crystalline Solids;2003-06
3. Large changes in refractive index by synchrotron-radiation-driven compaction of hydrogenated silicon nitride films;Applied Physics Letters;2002-04-29
4. Synchrotron-Radiation-Excited Structural Changes and Chemical Beam Epitaxy of Silicon-based Materials;Photo-Excited Processes, Diagnostics and Applications
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