Evidence of light‐induced bond breaking in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97067
Reference17 articles.
1. On light‐induced effect in amorphous hydrogenated silicon
2. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
3. Effects of prolonged illumination on the properties of hydrogenated amorphous silicon
4. Reversible conductivity changes in discharge‐produced amorphous Si
5. Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures
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2. Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition;Thin Solid Films;2012-10
3. Light and annealing induced changes in Si–H bonds in undoped a-Si:H;Solid State Communications;2000-10
4. Bond exchange, network restructuring and recrystallization in vacuum-ultraviolet-irradiated a-Si:H films;Journal of Non-Crystalline Solids;2000-06
5. Real-time modulation of Si-H vibration in hydrogenated amorphous silicon;Physical Review B;1999-12-15
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