Detection of photoinduced structural change in a-Si:H by bending effect-Reference-Cited by-同舟云学术

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Detection of photoinduced structural change in a-Si:H by bending effect

Published:1998-05 Issue: Volume:227-230 Page:263-266
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Gotoh T,Nonomura S,Nishio M,Masui N,Nitta S,Kondo M,Matsuda A

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon

2. Reversible Photo-Induced Structural Change in Hydrogenated Amorphous Silicon

3. Long-range structural relaxation in the Staebler-Wronski effect

4. Changes of infrared absorption by light soaking and thermal quenching in a-Si : H

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1. Study of transport parameters and defect states in thin film perovskites under different environments − air or vacuum − and after light-soaking;EPJ Photovoltaics;2020

2. Light-Induced Reversible Optical Properties of Hydrogenated Amorphous Silicon: A Promising Optically Programmable Photonic Material;physica status solidi (a);2018-04-06

3. Long-term irradiation effects of visible light on amorphous carbon nitride films;Diamond and Related Materials;2016-03

4. Contribution of nitrogen to the photoinduced deformation of amorphous carbon nitride films;Japanese Journal of Applied Physics;2015-10-28

5. Spectroscopic analysis of photo-induced deformation of amorphous carbon nitride films;Journal of Physics: Conference Series;2015-06-17

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