Capacitance–voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation-hard detectors
-
Published:2013-04
Issue:
Volume:85
Page:73-82
-
ISSN:0969-806X
-
Container-title:Radiation Physics and Chemistry
-
language:en
-
Short-container-title:Radiation Physics and Chemistry
Author:
Moloi S.J.,McPherson M.
Cited by
25 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献