New Parameter Extraction Techniques
Author:
Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-48847-4_5
Reference32 articles.
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2. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd ed. Wiley (2007)
3. A.M. Cowley, S.M. Sze, Surface states and barrier height of metal-semiconductor systems. J. Appl. Phys. 36(10), 3212–3220
4. S.J. Moloi, M. McPherson, Capacitance-voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation-hard detectors. Radiat. Phys. Chem. (2013). https://doi.org/10.1016/j.radphyschem.2012.12.002 (Article in Press)
5. A.I. Prokopyev, S.A. Mesheryakov, Restrictions of forward I-V methods for determination of Schottky diode parameters. Measurement 33(2), 135–144
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