Radiation damage on silicon after very high neutron fluence irradiation
Author:
Publisher
Elsevier BV
Subject
Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics
Reference14 articles.
1. Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
2. Characterization of high fluence neutron induced defect levels in high resistivity silicon detectors using a laser deep level transient spectroscopy (L-DLTS)
3. Results on radiation hardness of silicon detectors up to neutron fluences of 1015 n/cm2
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