Characterization of high fluence neutron induced defect levels in high resistivity silicon detectors using a laser deep level transient spectroscopy (L-DLTS)-Reference-Cited by-同舟云学术

Characterization of high fluence neutron induced defect levels in high resistivity silicon detectors using a laser deep level transient spectroscopy (L-DLTS)

Published:1994-03 Issue:1 Volume:342 Page:137-142
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Chengji Li,Li Zheng

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Radiation Effects in Semiconductors;Kimerling,1976

2. Radiation damage effects on silicon detectors presented at the Int. Conf. on Advanced Technology and Particle Physics;Vismara,1988

3. Effects of fast neutron radiation on the electrical properties of silicon detectors

4. Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectors

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