Thin amorphous gallium nitride films formed by ion beam synthesis-Reference-Cited by-同舟云学术

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Thin amorphous gallium nitride films formed by ion beam synthesis

Published:1999-01 Issue:1-4 Volume:147 Page:388-392
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Silva S.R.P.,Almeida S.A.,Sealy B.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Reactive sputtering of gallium nitride thin films for GaAs MIS structures

2. Photoconductive a-GaN prepared by reactive sputtering

3. Can Amorphous GaN Serve as a Useful Electronic Material?

4. Stoichiometric limitations of RF plasma deposited amorphous silicon–nitrogen alloys

5. Simulated annealing analysis of Rutherford backscattering data

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3. Evolution of the local structure in GaN:O thin films grown by ion-assisted deposition with film thickness;Surface and Interface Analysis;2005-01-31

4. Preparation of GaN thin film and Ga2O3 nanoribbons by plasma immersion ion implantation of N into GaAs;Journal of Applied Physics;2004-06-15

5. Theoretical Analysis of Structures of Ga 4 N 4 Clusters;Chinese Physics Letters;2003-08-29

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