Preparation of GaN thin film and Ga2O3 nanoribbons by plasma immersion ion implantation of N into GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1715137
Reference22 articles.
1. High-performance long-wavelength (/spl lambda//spl sim/1.3 μm) InGaAsPN quantum-well lasers
2. Nitridation of GaAs(110) using energetic N+ and N+2 ion beams
3. Synthesis of GaN by N ion implantation in GaAs (001)
4. Characterization of GaN synthesized in N-ion implanted GaAs
5. Thin amorphous gallium nitride films formed by ion beam synthesis
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1. GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-12
2. Structural, optical and annealing studies of nitrogen implanted GaAs;Physica B: Condensed Matter;2018-09
3. Synthesis of Ga2O3 Nanorods with Ultra-Sharp Tips for High-Performance Field Emission Devices;Science of Advanced Materials;2015-02-01
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5. Formation and transformation of embedded GaN nanocrystals;Applied Physics Letters;2012-05-14
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