Structural, optical and annealing studies of nitrogen implanted GaAs-Reference-Cited by-同舟云学术

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Structural, optical and annealing studies of nitrogen implanted GaAs

Published:2018-09 Issue: Volume:544 Page:47-51
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Saleem M.S.,Syed W.A.A.,Rafiq N.,Ahmed S.,Khan M.S.A.,–Ur–Rehman J.

Funder

Higher Education Commission of Pakistan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

2. GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy

3. The effect of nitrogen implantation on structural changes in semi-insulating GaAs

4. Irradiation-induced defects in GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect characterizations of N-rich GaNAs ternary alloys;Vacuum;2024-11

2. Modelling the strain build-up in nitrogen implanted tungsten films on silicon substrates;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-04

3. GaAs1-xNx candidate material for a high efficiency based homojunction solar cell;Experimental and Theoretical NANOTECHNOLOGY;2021-09-15

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