Evolution of the local structure in GaN:O thin films grown by ion-assisted deposition with film thickness-Reference-Cited by-同舟云学术

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Evolution of the local structure in GaN:O thin films grown by ion-assisted deposition with film thickness

Published:2005-01-31 Issue:3 Volume:37 Page:273-280
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Ariza M. J.,Koo A.,Trodahl H. J.,Ruck B. J.,Bittar A.,Jones D. J.,Bonnet B.,Rozière J.,Moscovici J.

Funder

MCyT.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference50 articles.

1. Can Amorphous GaN Serve as a Useful Electronic Material?

2. Density dependence of the structural and electronic properties of amorphous GaN

3. The Physics of Amorphous Solids

4. Blue luminescence from amorphous GaN nanoparticles synthesized in situ in a polymer

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1. X-ray absorption near-edge structure analysis of tribofilms generated by highly efficient, friction-reducing additive in water-polyglycol-glycol lubricant;Lubrication Science;2009-08-10

2. Probing the Structural/Electronic Diversity and Thermal Stability of Various Nanocrystalline Powders of Gallium Nitride GaN;Chemistry of Materials;2008-10-16

3. Localization of oxygen donor states in gallium nitride from first-principles calculations;Physical Review B;2007-07-31

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