Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Interactions between Dopants and End-of-Range Defects in Silicon
2. Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardment
3. Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chain
4. Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers
5. Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon
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1. Optimising dislocation-engineered silicon light-emitting diodes;Applied Physics B;2006-03-14
2. Modeling extended defect ({311} and dislocation) nucleation and evolution in silicon;Journal of Applied Physics;2004-03
3. The evolution of cavities in Si co-implanted with Si and He ions1;Materials Science and Engineering: B;2003-09
4. Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon;Solid State Phenomena;2003-09
5. Thermal evolution of extended defects in implanted Si:;Materials Science in Semiconductor Processing;2000-08
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