Thermal evolution of extended defects in implanted Si:-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Thermal evolution of extended defects in implanted Si:

Published:2000-08 Issue:4 Volume:3 Page:269-277
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Claverie Alain,Colombeau Benjamin,Ben Assayag Gérard,Bonafos Caroline,Cristiano Filadelfo,Omri Mourad,de Mauduit Bernadette

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. A systematic analysis of defects in ion-implanted silicon

2. Implantation and transient B diffusion in Si: The source of the interstitials

3. Stolk PA, Gossmann H-J, Eaglesham DJ, Jacobson DC, Rafferty CS, Gilmer GH, Jaraiz M, Poate JM, Luftman HS, Haynes TE. J Appl Phys 1997;81:6031 and references therein.

4. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

5. Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques;Advanced Materials Technologies;2024-04-18

2. Record-Breaking-High-Responsivity Silicon Photodetector at Infrared 1.31 and 1.55 μm by Argon Doping Technique;IEEE Transactions on Electron Devices;2023-05

3. On continuum simulations of the evolution of faulted and perfect dislocation loops in silicon during post-implantation annealing;MRS Advances;2023-01-17

4. In Situ Transmission Electron Microscopy Study of Shrinkage Kinetics of CH₄N-Molecular-Ion-Implantation-Induced Extended Defects;Journal of The Electrochemical Society;2022-04-01

5. TEM characterization of dislocation loops in proton irradiated single crystal ThO2;Journal of Nuclear Materials;2021-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3