Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. Ion implantation of epitaxial GaN films: damage, doping and activation
2. Lattice expansion of Ca and Ar ion implanted GaN
3. Ion implantation doping and isolation of GaN
4. Ca and O ion implantation doping of GaN
5. Annealing of ion implanted gallium nitride
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1. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09
2. Influence of implanted Mg concentration on defects and Mg distribution in GaN;Journal of Applied Physics;2020-08-14
3. The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation;Journal of Applied Physics;2005-07
4. Electrical and optical properties of p-GaN films implanted with transition metal impurities;Journal of Physics: Condensed Matter;2004-04-17
5. Raman study of Mg, Si, O, and N implanted GaN;Journal of Applied Physics;2003-10
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