Raman study of Mg, Si, O, and N implanted GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1606521
Reference41 articles.
1. GaN: Processing, defects, and devices
2. Electrical and structural analysis of high-dose Si implantation in GaN
3. Phonon Dispersion Curves in Wurtzite-Structure GaN Determined by Inelastic X-Ray Scattering
4. Zone-boundary phonons in hexagonal and cubic GaN
5. Disorder-Activated Scattering and Two-Mode Behavior in Raman Spectra of Isotopic GaN and AlGaN
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