The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation-Reference-Cited by-同舟云学术

The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

Published:2005-07 Issue:1 Volume:98 Page:013515
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Whelan S.,Kelly M. J.,Gwilliam R.,Jeynes C.,Bongiorno C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1940142

Reference8 articles.

1. The doping process and dopant characteristics of GaN

2. The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation

3. S. Ahmed, B. J. Sealy, and R. Gwilliam, Proceedings of the 14th International Conference on Ion Implantation Technology, Piscataway, New Jersey, 22–27 September 2002 (IEEE, New York, 2003), pp. 60–63.

4. Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride

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