Influence of implanted Mg concentration on defects and Mg distribution in GaN
Author:
Affiliation:
1. National Institute for Materials Science, Tsukuba 305-0047, Japan
2. Advanced Technology Laboratory, Fuji Electric Co., Ltd., Hino, Tokyo 191-8502, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0014717
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