Channeling study of lattice disorder and gold implants in gallium nitride
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Effects of hydrogen implantation into GaN
2. Damage buildup in GaN under ion bombardment
3. Ion beam and photoluminescence studies of Er and O implanted GaN
4. Ion implantation in GaN at liquid-nitrogen temperature: Structural characteristics and amorphization
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1. Coupled effects of electronic and nuclear energy deposition on damage accumulation in ion-irradiated SiC;Acta Materialia;2020-10
2. Predicting damage production in monoatomic and multi-elemental targets using stopping and range of ions in matter code: Challenges and recommendations;Current Opinion in Solid State and Materials Science;2019-08
3. Nitrogen sublattice analysis in GaN by non-Rutherford He-ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
4. Direct evidence of N aggregation and diffusion in Au+ irradiated GaN;Applied Physics Letters;2006-07-10
5. Nitrogen analysis using energetic ion beams;Surface and Interface Analysis;2005
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