Generation of defects induced by MeV proton implantation in silicon – Influence of nuclear losses
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Production of Fast Switching Power Thyristors by Proton Irradiation
2. Hydrogen-related defect centers in float-zone and epitaxial n-type proton implanted silicon
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1. Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements;IEEE Journal of the Electron Devices Society;2022
2. Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes;Materials Science in Semiconductor Processing;2018-03
3. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si;EPL (Europhysics Letters);2014-11-01
4. DLTS characterization of proton-implanted silicon under varying annealing conditions;physica status solidi (b);2014-09-04
5. Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities;Journal of Physics: Condensed Matter;2005-05-20
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