Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=22/a=013/pdf
Reference44 articles.
1. Influence of the dopant species on radiation-induced defects in Si single crystals
2. Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates
3. Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon
4. Tin-vacancy acceptor levels in electron-irradiated n-type silicon
5. Tin as a Vacancy Trap in Silicon at Room Temperature
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