DLTS characterization of proton-implanted silicon under varying annealing conditions-Reference-Cited by-同舟云学术

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DLTS characterization of proton-implanted silicon under varying annealing conditions

Published:2014-09-04 Issue:11 Volume:251 Page:2189-2192
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Laven J. G.¹,Jelinek M.²,Job R.³,Schustereder W.²,Schulze H.-J.¹,Rommel M.⁴,Frey L.⁴⁵

Affiliation:

1. Infineon Technologies AG; 81726 Munich Germany

2. Infineon Technologies Austria AG; 9500 Villach Austria

3. Department of Electrical Engineering and Computer Science; Muenster University of Applied Sciences; 48565 Steinfurt Germany

4. Fraunhofer Institute for Integrated Systems and Device Technology (IISB); 91058 Erlangen Germany

5. Chair of Electron Devices; University of Erlangen-Nuremberg; 91058 Erlangen Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

2. Defect engineering for modern power devices

3. Production of Fast Switching Power Thyristors by Proton Irradiation

4. Irradiation-Induced Deep Levels in Silicon for Power Device Tailoring

5. Proton irradiation of silicon: Complete electrical characterization of the induced recombination centers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A DLTS study of hydrogen doped czochralski-grown silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

2. The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature;Solid State Phenomena;2015-10

3. Metastable Defects in Proton Implanted and Annealed Silicon;Solid State Phenomena;2015-10

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