Proton irradiation of silicon: Complete electrical characterization of the induced recombination centers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346470
Reference10 articles.
1. Effective recombination levels in n- and p-type silicon irradiated by 4·5 MeV electrons
2. Electron irradiation induced recombination centers in silicon-minority carrier lifetime control
3. The Dominant Recombination Centers in Electron‐Irradiated Semiconductors Devices
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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