Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements-Reference-Cited by-同舟云学术

Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements

Published:2022 Issue: Volume:10 Page:761-768
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Szivos J.¹,Balogh L.¹,Rajta I.²^ORCID,Nagy G. U. L.²^ORCID,Gaal Z. T.²,Samu V.¹,Takefumi K.³,Zolnai Z.¹^ORCID

Affiliation:

1. Semilab Semiconductor Physics Laboratory Ltd., Budapest, Hungary

2. Tandetron Laboratory, Institute for Nuclear Research (ATOMKI), Debrecen, Hungary

3. Semilab Japan KK, Kanagawa, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09784931.pdf?arnumber=9784931

Reference24 articles.

1. Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

2. Low frequency modulated optical reflectance for the one-dimensional characterization of ultra shallow junctions (lage frequentie gemoduleerde optische reflectie voor de eendimensionale karakterisatie van ultra dunne juncties);dortu,2009

3. Advances in optical carrier profiling through high-frequency modulated optical reflectance

4. Generation of defects induced by MeV proton implantation in silicon – Influence of nuclear losses

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral mapping of damage patterns in plasma immersion ion-implanted silicon;MRS Advances;2022-11-28

2. IC Circuits—Soul of Modern Society;Proceedings of the 2022 6th International Seminar on Education, Management and Social Sciences (ISEMSS 2022);2022