Structural characterization of high-dose C++N+ ion-implanted (111) Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+Ion Implantation;Chemical Vapor Deposition;2010-03
2. Hydrogen-free SiCN Films Obtained by Electron Cyclotron Resonance Plasma;Journal of The Electrochemical Society;2007
3. SiBCN synthesis by high-dose N[sup +]+C[sup +]+BF[sub 2][sup +] ion implantation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
4. Transmission electron microscopy study of simultaneous high-dose C++N+ co-implantation into (111)Si;Thin Solid Films;2003-02-24
5. Cathodoluminescence from BN buried layers by high-dose ion implantation;Journal of Applied Physics;2002-05
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