Author:
Wendler E.,Breeger B.,Wesch W.
Funder
Deutsche Forschungsgemeinschaft
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-beam induced effects in multi-layered semiconductor systems;physica status solidi (b);2016-07-15
2. Primary Processes of Damage Formation in Semiconductors;Ion Beam Modification of Solids;2016
3. Damage evolution and amorphization in semiconductors under ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04
4. Mechanisms of damage formation in semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-08
5. Three-step amorphisation process in ion-implanted GaN at 15 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05